Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping
نویسندگان
چکیده
Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping " (2007).
منابع مشابه
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybu...
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